Emerging Resistive Switching Memories (springerbriefs In Materials)
by Jianyong Ouyang /
2016 / English / PDF
5.9 MB Download
This brief describes how non-volatile change of the resistance ,
due to the application of electric voltage allows for fabrication
of novel digital memory devices. The author explains the physics of
the devices and provides a concrete description of the materials
involved as well as the fundamental properties of the technology.
He details how charge trapping, charge transfer and conductive
filament formation effect resistive switching memory devices.
This brief describes how non-volatile change of the resistance ,
due to the application of electric voltage allows for fabrication
of novel digital memory devices. The author explains the physics of
the devices and provides a concrete description of the materials
involved as well as the fundamental properties of the technology.
He details how charge trapping, charge transfer and conductive
filament formation effect resistive switching memory devices.