Growing Graphene On Semiconductors
by Nunzio Motta /
2017 / English / PDF
11.4 MB Download
Graphene, the wonder material of the 21st century, is expected to
play an important role in future nanoelectronic applications, but
the only way to achieve this goal is to grow graphene directly on
a semiconductor, integrating it in the chain for the production
of electronic circuits and devices.
Graphene, the wonder material of the 21st century, is expected to
play an important role in future nanoelectronic applications, but
the only way to achieve this goal is to grow graphene directly on
a semiconductor, integrating it in the chain for the production
of electronic circuits and devices.
This book summarizes the latest achievements in this field, with
particular attention to the graphitization of SiC. Through
high-temperature annealing in a controlled environment, it is
possible to decompose the topmost SiC layers, obtaining
quasi-ideal graphene by Si sublimation with record electronic
mobilities, while selective growth on patterned structures makes
possible the opening of a gap by quantum confinement.
This book summarizes the latest achievements in this field, with
particular attention to the graphitization of SiC. Through
high-temperature annealing in a controlled environment, it is
possible to decompose the topmost SiC layers, obtaining
quasi-ideal graphene by Si sublimation with record electronic
mobilities, while selective growth on patterned structures makes
possible the opening of a gap by quantum confinement.
The book starts with a review chapter on the significance and
challenges of graphene growth on semiconductors, followed by
three chapters dedicated to an up-to-date analysis of the
synthesis of graphene in ultrahigh vacuum, and concludes with two
chapters discussing possible ways of tailoring the electronic
band structure of epitaxial graphene by atomic intercalation and
of creating a gap by the growth of templated graphene
nanostructures.
The book starts with a review chapter on the significance and
challenges of graphene growth on semiconductors, followed by
three chapters dedicated to an up-to-date analysis of the
synthesis of graphene in ultrahigh vacuum, and concludes with two
chapters discussing possible ways of tailoring the electronic
band structure of epitaxial graphene by atomic intercalation and
of creating a gap by the growth of templated graphene
nanostructures.