Lateral Power Transistors In Integrated Circuits (power Systems)
by Tobias Erlbacher /
2014 / English / PDF
7.6 MB Download
The book summarizes and compares recent advancements in the
development of novel lateral power transistors (LDMOS devices)
for integrated circuits in power electronic applications.
The book summarizes and compares recent advancements in the
development of novel lateral power transistors (LDMOS devices)
for integrated circuits in power electronic applications.
In its first part, the book motivates the necessity for lateral
power transistors by a top-down approach: First, it presents
typical energy conversion applications in modern industrial,
automotive and consumer electronics. Next, it introduces common
circuit topologies suitable for these applications, and discusses
the feasibility for monolithic integration. Finally, the
combination of power and logic functionality on a single chip is
motivated and the requirements and limitations for the power
semiconductor devices are deduced.
In its first part, the book motivates the necessity for lateral
power transistors by a top-down approach: First, it presents
typical energy conversion applications in modern industrial,
automotive and consumer electronics. Next, it introduces common
circuit topologies suitable for these applications, and discusses
the feasibility for monolithic integration. Finally, the
combination of power and logic functionality on a single chip is
motivated and the requirements and limitations for the power
semiconductor devices are deduced.
The second part describes the evolution of lateral power
transistors over the past decades from the simple pin-type
concept to double-acting RESURF topologies. It describes the
principle of operation for these LDMOS devices and discusses
limitations of lateral power devices. Moreover, figures-of-merit
are presented which can be used to evaluate the performance of
the novel lateral power transistors described in this book with
respect to the LDMOS devices.
The second part describes the evolution of lateral power
transistors over the past decades from the simple pin-type
concept to double-acting RESURF topologies. It describes the
principle of operation for these LDMOS devices and discusses
limitations of lateral power devices. Moreover, figures-of-merit
are presented which can be used to evaluate the performance of
the novel lateral power transistors described in this book with
respect to the LDMOS devices.
In the last part, [..] the fundamental physical concepts
including charge compensation and trench gate topologies are
discussed. Also, the status of research in LDMOS devices on
silicon carbide is presented. Advantages and drawbacks for each
of these integration approaches are summarized, and the
feasibility with respect to power electronic applications is
evaluated.
In the last part, [..] the fundamental physical concepts
including charge compensation and trench gate topologies are
discussed. Also, the status of research in LDMOS devices on
silicon carbide is presented. Advantages and drawbacks for each
of these integration approaches are summarized, and the
feasibility with respect to power electronic applications is
evaluated.
