Nitride Wide Bandgap Semiconductor Material And Electronic Devices
by Yue Hao /
2016 / English / PDF
20.8 MB Download
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
