Physics And Technology Of Crystalline Oxide Semiconductor Caac-igzo: Application To Lsi (wiley Series In Display Technology)
by Masahiro Fujita /
2016 / English / EPUB
84 MB Download
This book describes the application of c-axis aligned crystalline
In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration
(LSI) circuits. The applications include Non-volatile Oxide
Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide
Semiconductor Random Access Memory (DOSRAM), central processing
unit (CPU), field-programmable gate array (FPGA), image sensors,
and etc. The book also covers the device physics (e.g., off-state
characteristics) of the CAAC-IGZO field effect transistors (FETs)
and process technology for a hybrid structure of CAAC-IGZO and Si
FETs. It explains an extremely low off-state current technology
utilized in the LSI circuits, demonstrating reduced power
consumption in LSI prototypes fabricated by the hybrid process. A
further two books in the series will describe the fundamentals; and
the specific application of CAAC-IGZO to LCD and OLED
displays.
This book describes the application of c-axis aligned crystalline
In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration
(LSI) circuits. The applications include Non-volatile Oxide
Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide
Semiconductor Random Access Memory (DOSRAM), central processing
unit (CPU), field-programmable gate array (FPGA), image sensors,
and etc. The book also covers the device physics (e.g., off-state
characteristics) of the CAAC-IGZO field effect transistors (FETs)
and process technology for a hybrid structure of CAAC-IGZO and Si
FETs. It explains an extremely low off-state current technology
utilized in the LSI circuits, demonstrating reduced power
consumption in LSI prototypes fabricated by the hybrid process. A
further two books in the series will describe the fundamentals; and
the specific application of CAAC-IGZO to LCD and OLED
displays.
Key features:
Key features:
• Outlines the physics and characteristics of CAAC-IGZO FETs that
contribute to favorable operations of LSI devices.
• Outlines the physics and characteristics of CAAC-IGZO FETs that
contribute to favorable operations of LSI devices.
• Explains the application of CAAC-IGZO to LSI devices,
highlighting attributes including low off-state current, low power
consumption, and excellent charge retention.
• Explains the application of CAAC-IGZO to LSI devices,
highlighting attributes including low off-state current, low power
consumption, and excellent charge retention.
• Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc.,
referring to prototype chips fabricated by a hybrid process of
CAAC-IGZO and Si FETs.
• Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc.,
referring to prototype chips fabricated by a hybrid process of
CAAC-IGZO and Si FETs.