Physics Of Semiconductor Devices
by Massimo Rudan /
2017 / English / PDF, EPUB
18.1 MB Download
This textbook describes the basic physics of semiconductors,
including the hierarchy of transport models, and connects the
theory with the functioning of actual semiconductor devices.
Details are worked out carefully and derived from the basic
physical concepts, while keeping the internal coherence of the
analysis and explaining the different levels of approximation.
Coverage includes the main steps used in the fabrication
process of integrated circuits: diffusion, thermal oxidation,
epitaxy, and ion implantation. Examples are based on
silicon due to its industrial importance. Several chapters
are included that provide the reader with the quantum-mechanical
concepts necessary for understanding the transport properties of
crystals. The behavior of crystals incorporating a
position-dependent impurity distribution is described, and the
different hierarchical transport models for semiconductor devices
are derived (from the Boltzmann transport equation to the
hydrodynamic and drift-diffusion models). The transport models
are then applied to a detailed description of the main
semiconductor-device architectures (bipolar, MOS, CMOS),
including a number of solid-state sensors. The final chapters are
devoted to the measuring methods for semiconductor-device
parameters, and to a brief illustration of the scaling rules and
numerical methods applied to the design of semiconductor devices.
This textbook describes the basic physics of semiconductors,
including the hierarchy of transport models, and connects the
theory with the functioning of actual semiconductor devices.
Details are worked out carefully and derived from the basic
physical concepts, while keeping the internal coherence of the
analysis and explaining the different levels of approximation.
Coverage includes the main steps used in the fabrication
process of integrated circuits: diffusion, thermal oxidation,
epitaxy, and ion implantation. Examples are based on
silicon due to its industrial importance. Several chapters
are included that provide the reader with the quantum-mechanical
concepts necessary for understanding the transport properties of
crystals. The behavior of crystals incorporating a
position-dependent impurity distribution is described, and the
different hierarchical transport models for semiconductor devices
are derived (from the Boltzmann transport equation to the
hydrodynamic and drift-diffusion models). The transport models
are then applied to a detailed description of the main
semiconductor-device architectures (bipolar, MOS, CMOS),
including a number of solid-state sensors. The final chapters are
devoted to the measuring methods for semiconductor-device
parameters, and to a brief illustration of the scaling rules and
numerical methods applied to the design of semiconductor devices.