Silicon Quantum Integrated Circuits: Silicon-germanium Heterostructure Devices: Basics And Realisations (nanoscience And Technology)
by E. Kasper /
2005 / English / PDF
6.2 MB Download
Quantum size effects are becoming increasingly important in
microelectronics, as the dimensions of the structures shrink
laterally towards 100 nm and vertically towards 10 nm. Advanced
device concepts will exploit these effects for integrated
circuits with novel or improved properties. Keeping in mind the
trend towards systems on chip, this book deals with silicon-based
quantum devices and focuses on room-temperature operation. The
basic physical principles, materials, technological aspects, and
fundamental device operation are discussed in an
interdisciplinary manner. It is shown that silicon-germanium
(SiGe) heterostructure devices will play a key role in realizing
silicon-based quantum electronics.
Quantum size effects are becoming increasingly important in
microelectronics, as the dimensions of the structures shrink
laterally towards 100 nm and vertically towards 10 nm. Advanced
device concepts will exploit these effects for integrated
circuits with novel or improved properties. Keeping in mind the
trend towards systems on chip, this book deals with silicon-based
quantum devices and focuses on room-temperature operation. The
basic physical principles, materials, technological aspects, and
fundamental device operation are discussed in an
interdisciplinary manner. It is shown that silicon-germanium
(SiGe) heterostructure devices will play a key role in realizing
silicon-based quantum electronics.
